基于反射测定法的SOI膜厚检测系统.pdfVIP

第 43 卷第 5 期 微电子学 Vol. 43 , No. 5 2013 年 10 月 ~icroelectronics Oct. 2013 ·半导体.a.件与工艺· 基于反射测定法的 SOI 膜厚检测系统 严冬1 ，李国光1 ，刘涛1 ，熊伟1 ，李成敏2 ，郭青杨2 ，叶甜春1 (1.中国科学院微电子器件与集成技术重点实验室，北京 100029;2. 北京智朗芯光科技有限公司，北京 100191) 摘 要: 研制可用于膜厚检测的系统，获取薄膜反射光谱，基于多层膜反射率模型和非线性回归 算法得到厚度分布圈。对SOI 材料的反射光谱进行测试及分析，结果表明，对于厚度为 30μm 的 顶层硅，其静态重复性为土0.01 nm，动态重复性为土1. 30 nm; 对于厚度为 2μm 的氧化层，其静态 重复性为::1:0.02 nm，动态重复性为士1. 60 nmo 该技术还适用于其他集成电路制造工艺中不同材 质的膜厚检测。 关键词: SOI; 反射测定法:膜辱检测;形貌 中图分类号:TN307 文献标识码:A 文章编号: 1004-3365 {20l3 )05-0727-04 A Thickn创s Measurement System for SOI Films Bωed on Reflectometry 1 2 1 1 YANlli晖，口G叫田吨1 ， LIU Tao ，泪ONG Wei , LI Che咱nin ， GUO Qi吨yani ， YE Tianchun (1. Key Lab of Microelec. Dev. . Integr. Technol. , The Chinese Academy of Sciences , Beijing 100029 , P. R. China; 2. BeiOptics Technology Co. , Ltd. , Beijing 100191 , P. R. China) Abstract: A film thickness measurement system was developed based on reflectometry , in which distribution of film thicknesses was obtained with multilayer reflectance model and nonlinear regression algoritlun. A silicon-on- insulator (SOD sample with -30μm top layer was measured and analyzed. lt has been shown that , for 30μn top Si layer , the precision was 土O. 01 nm , and the repeatability was ::l:: 1. 30 nm; and for 2μmoxide layer , the precision was 士O. 02 nm , and the repeatability was 土1. 60 nm. This system is also applicable for measuring a variety of thin film stacks in IC rnanufacturing processes. Key words:ω1; Reflectometry; Film thickness measurement; Topog