中英对照版本之词汇-硅片.doc

中英对照版本之词汇-硅片M Y:B;iVtH X/VD(xUFS(\Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 8CfBB8Mp半导体技术天地[Semiconductor Technology World]芯片设计版图工艺制程封装测试wafer,chip,ic,process,layout,package,FA受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子 jkF8IA5pGAlignment Precision - Displacement of patterns that occurs during the photolithography process. KX}nMK ye*X套准精度 - 在光刻工艺中转移图形的精度。 /ZnHj0vS6GAnisotropic - A process of etching that has very little or no undercutting 3m)zx[O!P^4w 各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。 ;QT%gx(x+S,h0x半导体技术天地[Semiconductor Technology World]芯片设计版图工艺制程封装测试wafer,chip,ic,process,layout,package,FAArea Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. /dNorM沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。 R_ am8N? ? ? ? D ZAzimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse. Uj(fypu,h椭圆方位角 - 测量入射面和主晶轴之间的角度。 半导体技术天地[Semiconductor Technology World]芯片设计版图工艺制程封装测试wafer,chip,ic,process,layout,package,FA!Li1i1WWe1v;\X!C)LBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.) !M(VCQ4p,V J6_背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”） z,J TXhVg8O)pSy/uBase Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.  DFTI#CMv!tJ底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。 %ik2m
~ eBipolar - Transistors that are able to use both holes and electrons as charge carriers. O$GQjn;j;I? ? ? ? C;Ef双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。 kZn)i`}9h4[QEBonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer. V*HP|w