前工艺设备简介.ppt

* * * * * * * * * * * * * * * * * * Lift-off Process R680 E-Gun Revolution dome Shutter Cr/Pt/Au PR Cross section image of lift-off deposition film. * Key Feature of lift-off process technology. 1.Angle of incident of evaporation material is vertical toward substrate. 2.Temperature of deposition can be kept below allowable temperature for photo-resist. Lift-off deposition： Vertical angle of incident Patented Plasma Box? Components Camera Plasma Box RF Feedthrough Process Gases Heater Vacuum Unique patented design: Independently pumped, heated vacuum chamber within separate vacuum vessel Dual independent pumping systems prevents contamination of the deposited layers * * Identifying Deposition Process Goals High Breakdown Strength Stress Pin Hole Free Surfaces Step Coverage Damage Uniform Thickness Uniform Index Deposition Rates Robust Process Reproducibility Low particulates Minimal clean cycles Throughput Matching processes, goals, and systems is necessary * * Gas injection RF injection Process pumping Wafer HIGH PRESSURE PLASMA Vacuum pumping HOT COLD Ougassing Impurities LOW PRESSURE VACUUM PLASMA BOX DESIGN IS UNIQUE TO MAINTAIN HIGH PURITY OF DEPOSITION and excellent repeatability PECVD Deposition:Plasma Box Concept Pressure of Plasma remains higher (x100) than Vacuum Chamber Plasma box reactor in aluminum based material and HOT * * TMP RP1 RP2 Process Gases RF Power Laser EPD Plasma Box Technology Plasma confined in a uniformly heated reactor Excellent thickness and refractive index uniformity Good control of the particle contamination * * Plasma Box? Unique Operation P1 P2 TMP P1 P2 Rotary Pump Cleaning Gases N2 P1 P2 TMP P1 P2 Process Gases Rotary Pump Deposition Mode P1 P2 prevents out-gassing from cold chamber walls Result: Ultra pure films without using a load-lock Cleaning Mode P1 P2 keeps F atoms inside Plasma Box? Result: No corrosion to hot reactor parts * * Low Temperature PECVD Deposition Low temperature passivation SiO2 or SiN