硅片行业术语大全-中英文对照 A-H教材.doc

硅片行业术语大全(中英文对照 A-H)[align=center][size=5][color=red][b]硅片行业术语大全(中英文对照 A-H)[/b][/color][/size][/align]Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.受主 -??一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子Alignment Precision - Displacement of patterns that occurs during the photolithography process.套准精度 - 在光刻工艺中转移图形的精度。Anisotropic - A process of etching that has very little or no undercutting各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.椭圆方位角 - 测量入射面和主晶轴之间的角度。Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。Bipolar - Transistors that are able to use both holes and electrons as charge carriers.双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。Bonding Interface - The area where the bonding of two wafers occurs.绑定面 - 两个晶圆片结合的接触区。Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.氧化埋层(BOX) - 在两个晶圆片间的绝缘层。Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon