半导体工业中临界尺寸线边缘粗糙度测量.pdf

37 5 Vo l37 N o5 2 0 0 5 5 JOURNAL OF HARBIN INSTITUTE OF TECHNOLOGY M ay, 2005 李洪波, 赵学增, 褚 巍, 肖增文 ( , 150001, E m ail: 126. com) : 详细论述了刻线边缘粗糙度问题的产生原因, 线边缘粗糙度的定义以及目前采用的测量方法 分 析方法, 比较了线边缘粗糙度的测量工具, 并讨论了测量线边缘粗糙度的技术障碍. : 纳米; 侧墙粗糙度; 线边缘粗糙度; 原子力显微镜 : TG84; TH 161 : A : 0367 6234( 2005) 05 0674 05 L ine-edge-roughness m easurem en t of critica-l dim ensions in sem iconductor fab rication indu stry LIHong bo, ZHAO Xue zheng, CHUW e,i X IAO Zeng wen ( School ofM echanical and Electrical Engineering, H arbin Institute of Technology, H arbin 150001, Ch ina, E m ail: 126. com) Abs tract: The background ( reason) why line edge roughness is raised up, as well as the definition of line edge roughness according to ITRS is discussed. The current m easurement and analysismethod on line edge roughness are introduced and the measurement tools are compared. The technical barrier on the line edge roughnessmeasurement is discussed also. K ey w ord s: nanometer; side wall roughness; line edge roughness; AFM ( line , , w idth)( isolated gatew idth), 2004 65 nm; [ 1] , MEDEA [ 2] . , 100 nm CDs ( Photolithography). [ 3] . , 100 nm CDs ( SEM ), . 100 nm ( Critical Dmi ensions, 100 nm CDs CDs). 100 ( LER), 100 nm CDsLER nm CD s. (NSIA) ( CDs ( Road 10 nm[ 4] ), CDs map), [ 5, 6]