微电子工艺——3氧化_515203491.pdf

微电子工艺技术 第三讲 单项工艺 薄膜制备技术1-炉式氧化、RTP和ALD 钱 鹤 清华大学微电子研究所 Oxide: the Life of CMOS • Si and SiO2 are the most • Easy patterning by dry understood materials; and wet etch Si/SiO2 interface is the • Stable and reproducible most understood interface down to sub-nm • SiO2 easily grown • Very few mechanical thermally or by deposition and electrical defects • Adhere very well • Very good insulator • Block diffusion (except B (9.0eV bandgap; 7- and alkali ions) 15MV/cm breakdown • Resistant to most field; high QBD) chemicals with high • Tunable refractive index selectivity Typical Use of SiO2 in IC Inter-metal Field oxide dielectric 1µm (IMD) 0.1µm Mask oxide Pad oxide IMD Gate oxide 10nm Tunnel oxide for CMOS logic and 1nm DRAM Poly Gate Natural oxide from cleaning S D Channel MOSC box International Technology Roadmap for Semiconductors (ITRS) Yr of first shipment 1999 2003 2006 2009 2012 2015 Gate pitch (nm) 180 130 100 70 50 35 DRAM (Gbits/chip)