硅岛式微谐振压力传感器灵敏度分析与仿真_刘勇.pdfVIP

25 7 2008 7 : 1006 - 9348( 2008) 07 - 0317- 04 刘勇, 叶湘滨, 熊飞丽, 张文娜 (, 410073) : , , , , , , , , , ANSYS, , , : ; ; ; ; : TP212 : A Sensitivity Analysisand Simulation ofM icrofabricated Resonant Pressure Sensor on Silicon Island Structure L IU Y ong, YE X i ng- b in, X IONG Fei- l,i ZHANG W en- n n ( College ofM ech tron ics Engineering nd Autom tion, N tion lUn iversity of Defense T echnology, Ch ngsh Hun n 4 10073, Chin ) ABSTRACT:M icro- reson nt pressure sensor is sm ll, lightw eight, w ith high precis ion nd digit l output, it h s bro d pplic tion prospect in erosp ce nd other fields. H ow ever, due to MEMS technology constr ints, them nu f cturing of com plex structures h s m ny d ifficu lties, thus for chieving high sensitivity for pressurem e surem ent, the structur l des ign ofm icro- reson nt pressure sensor is p rticu l rly mi port nt. The p per presents new silicon is l nd reson nt be m support structure. using squ re silicon di phr gm s typic l prelmi in ry sens ing un it. It h s tw o silicon isl nds on the upper surf ce of the di phr gm for fix ing silicon reson tor be m. Through ANSY S smi ul tion, the resu lts of the n lysis show s th t w ith in cert in r nge, the structure c n effectively r ise the reson nt be m m gnific tion stress, thereby incre sing the sensitivity ofm icro pressure sensor. KEYW RDS:MEMS; Pressure; Silicon isl nds; Reson nt be m; FEM smi u l tion [ 1] 1 , , , ,