InP基In0.53Ga0．47As光电探测器的量子效率优化.pdfVIP

第27卷第2期 红外与毫米 波学报 Vo1．27．No．2 2008年4月 J Infrared Millim 腑 ves April，2008 文章编号：1001—9014(2008)02—0081—05 QUANTUM EFFICIENCY oPTIMIZATIoN oF InP-BASED IIlo G As PHOTODETECTORS ． 53 ． 47 TIAN Zhao—Bing ， GU Yi ， ZHANG Yong．Gang (1．State Key Laboratory of Functional Materials for Informatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China； 2．Postgraduate School，Chinese Academy of Sciences，Beijing 100039，China) Abstract：A modified physical model on the optical response of InP—based In。 Ga0 47 As PIN photodetectors was presented． ． 53 By introducing a collecting factor，the optical response and quantum efficiency were simulated．The influences of device pa— rameters on quantum efficiency of typical In0 53 Gao 47 As／InP PIN photodetectors under both front and backside illuminated conditions were investigated by using our mode1．Furthermore，two modified InGaAs／InP PD structures for back—illumina— tion were proposed，and the optimal structural parameters were discussed． Key words：short—wave—infrared；photovohaic detectors；InGaAs；quantum efficiency CLC number：TN2 Document：A InP基IIlo．53 Gao．47 As光电探测器的量子效率优化 田招兵 ， 顾 溢 ， 张永目4 (1．中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室，上海 200050； 2．中国科学院研究生院，北京 100039) 摘要：建立了不同结构的InP基PIN型In。 ，Gao As探测器光响应的物理模型．通过引入收集效率函数，模拟计算 了探测器量子效率和光响应．采用该模型分别研究了正面进光和背面进光情况下典型的In。 ，Gao As／InP PIN探 测器的结构参数对器件量