32nm世代半导体制造用CMP材料.PDF

Advanced CMP Consumables for nm Generation Masayuki Motonari Shoei Tsuji Tomohisa Konno Hirotaka Shida Kazuhito Uchikura Iwao Mihara Hiroyuki Miyauchi For coming nm generation and beyond in Integrated CircuitICmanufacturing, innovational Chemical Mechanical PolishingCMPmaterial is necessary to prevent any damage of delicate film stack and structure with low-k dielectric materials during CMP process. The low-k dielectric materials used in this generation and Cu material for wiring can be easily damaged by mechanical force and chemical reac- tion. Furthermore, higher planarity with low dishing and erosion is desired. To meet these demanding re- quirements, approach combining pad and slurry technologies would be quite essential. JSR has developed advanced nm CMP consumables with slurry, which contains soft abrasive and unique chemistry, and lower hardness solid pad. This paper describes discussion on some of the essential key technology for cop- per and barrier polish. Lower defectivity with better planarity has been confirmed with JSR CMP consum- able sets.