Ⅲ-Ⅴ族半导体化合物快速热退火扩Zn方法研究pdf.PDF

Tec nology Column doi: 103969/ jissn1003353x201003012 Zn 1 2 3 肖雪芳, 谢生 , 陈朝 ( 1厦门理工学院 电子与电气工程系, 厦门361024; 2天津大学 电子信息工程学院, 天津300072; 3厦门大学 物理系, 厦门361005) : 以GaAs 和InP 材料为例, 对化合物半导体材料中的快速热退火扩Zn 可行性进行比较 分析, 研究 明, 化合物半导体材料中快速热退火扩Zn 可行性与化合物半导体材料的分解温度 有着密切关系化合物半导体材料分解温度越低, 对扩散源帽层和阻挡层要求越高针对InP 材料高于360 就分解低温Zn 扩散困难的特点, 提出了直接溅射Zn 层在410 低温扩散的方 法对InP 快速热退火扩散结果进行分析, 初步分析 明其掺杂机理是形成合金结 : 化合物半导体; 锌扩散; 快速热退火; 砷化镓; 磷化铟 : TN3054! ! : A ! ! : 1003353X ( 2010) Study on Zn Diffusion in Semiconductor Compounds Using Rapid Thermal Annealing Process 1 2 3 Xiao Xuefang , Xie S eng , C en C ao ( 1Dep t. of Electron Engineering, X iamen University of Technology , X iamen 361024, China; 2School of Electronic Inf ormation Eng ineering, Tianj in University , Tianj in 300072, China; 3Dep t . of Physics , Xiamen University , X iamen 361005, China Abstract: Zn diffusion in semiconductor compounds ( GaAs and InP) using rapid t ermal annealing ( RTA) process was investigated. T e feasibility of t is met od mostly depends on decompounded temperature of semiconductor compounds. T e lower t e decompounded temperature, t e ig er t e requirements on t e diffusion layer, diffusion prevented layer and cap layer. As t e decompounded temperature of InP is 360 , it is ard to carry out Zn diffusion in low temperature, a met od of Zn diffusion from direct sputtering Zn films into InP at 410 was proposed. T e primary mec anism of Zn diffusion in InP is assumed t at alloy junctions come into being using rapid t ermal annealing. Key words: semiconductor compound; Zn diffusion, RTA