不同光刻胶作保护层对a鄄igzo tft 性能的影响 - 电子器件.pdf

第35卷 第4 期 电 子 器 件 Vol.35摇 No.4 2012年8 月 ChineseJournal of Electron Devices Aug.2012 Effect of Various Photoresist Protectors on the Performance of a鄄IGZO TFT* 1,2 4 4 3 4 2,3,4 * ZHANG Geng ,WANGJuan ,XIANG Guihua ,CAI Junrui ,SUN Qinghua ,ZHAO Weiming (1.School of Physics and Engineering,Sun Yat鄄sen University,Guangzhou510275,China; 2.DongguanAnwell DigitalMachinery Co.Ltd. ,Dongguan Guangdong 523080,China; 3.DongguanLitewell(OLED)Technology Inc. ,Dongguan Guangdong 523080,China; 4.Institute of OLED Industrial Technology of Dongguan,Dongguan Guangdong 523080,China) Abstract:Thispaper discussestheinfluenceofvariousphotoresistprotectorsontheelectricalpropertiesofthebottom gated TFT,which iswith a鄄IGZOasthe active layer deposited by Pulsed DC sputtering.The investigation found that the photoresist can maintain the electric properties in a short periodwith the protector.Then,the electrical properties begin to deteriorate,especially the threshold voltages decay obviously,and the work modes change from enhancement to depletion when the protected devices are placed in the air for a time.It爷s inferred that,the dissolvant in the photoresist contacts with the IGZO channel and the chemical reaction between them causes desorption of oxygen, which makesthe carrier concentration increase.Besidesthat,the investigation found that the electrical properties are smaller in decay and higher in stability with SU鄄8 photorisist asthe protector than the others. Key words:a鄄IGZOTFT;photoresist;protector;SU鄄8;stability EEACC:2120摇 摇 摇 摇 doi:10.3969/j.issn.1005-9490.2012.04.004 不同光刻胶作保护层对 a鄄IGZO TFT性能的影响* 1,2 4 4 3 4