利用EBSD分析通孔填充之各阶段的电镀铜微结构.PDF

利用EBSD分析通孔填充之各階段的電鍍 銅微結構* EBSD Analysis on the Microstructures of Electrolytic Cu Deposition in the Through Hole (TH) Filling Process 1 2,3 3 3 C. E. Ho, C. W. Liao, H. H. Hua, H. J. Chen I n t h i s st u d y , t h e m or p h o l o g i c a l an d (field-emission scanning electron microscope, crystallographic evolutions of the through hole FE-SEM) (electron (TH) filling by electrolytic Cu deposition with the backscatter diffraction, EBSD) plating time (t) were investigated using a field- (through hole, TH) emission scanning electron microscope equipped with electr on b ack scatter diffr action (EB SD) (t) analysis system . The Cu deposition rate in the t40-74 min TH was strongly dependent on t, which was in a 0.3 µm/min t74-80 min moderate rate of ~0.3 μm/min at t 40-74 min, 4 µm/min subsequently accelerated to ~4 μm/min at t 74- 80 min (termed “fast deposition regime”), and (t80-100 min) 0.16 µm/ decelerated to ~0.16 μm/min in the final plating min EBSD (t40- regime (t 80- 100 min). EBSD analyses showed 74 min) [111] ||TD that [111] ||TD (transverse direction) orientation (t74-80 min) displayed relatively strong in the initial induction [111] ||TD [101] ||TD regime, while [111] ||TD [10 1] ||TD orientations (grain size) becam e dominant in the fast deposition regime (t80-100 min) [111] ||TD (i.e., t 74-80 min), along with large grain sizes, an d a v ery low [ 111] ||TD or ient at i