奈米管(棒)状聚苯胺在太阳光能上的应用 - 国立高雄应用科技大学化学 .doc

奈米管(棒)状聚苯胺在太阳光能上的应用 - 国立高雄应用科技大学化学 .doc

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奈米管(棒)状聚苯胺在太阳光能上的应用 - 国立高雄应用科技大学化学

中文摘要 改變聚苯胺高分子聚合條件如不同種類摻雜質子酸、不同破乳劑、二四氫夫喃及對甲基苯胺添加量等參數合成出不同之奈米管狀聚苯胺高分子。進而利用其獨具之吸收近紅外線之特性達到隔截太陽光中紅外線熱線並維持一定可見光穿透率功能。結果顯示,含十二烷基苯磺酸所合成出的奈米管狀聚苯胺在穿透式顯微鏡中呈透明狀態。而以少許氨水水溶液破乳者其顆粒較細,近紅外線吸收效果呈現藍位移現象,可見光穿透率也較佳。含四氫夫喃可使合成出的奈米管狀聚苯胺顆粒更細,近紅外線吸收效果呈現紅位移現象,可見光穿透率最佳。對甲基苯胺添加則可獲得針狀實心奈米棒狀聚苯胺高分子但導電度較差,近紅外線吸收效果不好但能減少可見光中紅光吸收量而提高透明度。 在多晶矽太陽能應用上,顯示將含奈米管狀聚苯胺高分子之油墨直接塗在p極(鋁電極)上,可在50,000 Lux.下,有效降低並聯電阻、提升電洞傳導度而提升整體發電效率。至於塗在p層及鋁電極間當電洞傳輸層或去除鋁電極質接當正電極則分別因重新塗抹之鋁膠無法燒結及聚苯胺高分子本身相對於鋁導電度較差無法有效降低電阻致使發電效率不升反降 英文摘要 The preparation conditions of the nanotubular polyaniline ( PANINT ) via an emulsion polymerization were varied to obtain various types of polyanilines to test their feasibility as an IR cutter ( cutting Near IR but let visible light go through) and to d the polymerization of the PANINT including variation of the dopingecrease the series resistance. Several parameters were changed during protonic acid, types of de-emusifiers, percentage of tetrahydrofuran ( THF ) in the reaction mixtures, percentage of p-mehtylaniline ( PMA ) in the reaction mixtures.. etc. The application of ammonia aqueous solution as a de-emulsifier can effectively reduce the particle size of the PANINT to increase its NIR absorbance and visible light transmittance as well. Likewise, the presence of hydrophobic benzene solvent in the polymerization mixtures can also shrink the particle size and obtain a higher absorbance of NIR without losing the transmittance of visible light. Applying p-methyl aniline can effectively decrease its molecular weight and obtain needle-like PANINT with a poorer NIR absorbance and conductivity. But it can enhance the absorption of the red light in the visible range and increase the transparency of the film. The efficiency of the amorphous silicone solar cell ( ASSC ) panel can be effectively increased under 50,000 Lux. if ink containing PANINT is coated on the surface of the Al electrode of the ASSC due to the decrease of the parallel resistance. Neither coating between the p-type and Al electrode as h

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