73 A Pixel Structure for OLEDonSilicon （以7为OLEDonSilicon像素结构）.pdf

7-3 A Pixel Structure for OLED-on-Silicon Microdisplays Hyuk Kim, Bong-Choon Kwak, Han-Sin Lim and Oh-Kyong Kwon1 Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea Phone: +82-2-2220-0359 Fax: +82-2-2297-2231 E-mail: okwon@hanyang.ac.kr1 In this paper, we propose a new pixel structure for the organic light emitting diode (OLED)-on-silicon displays for 0.4-inch VGA resolution microdisplay with 6-bit gray scale. The proposed pixel structure is composed of two p-MOSFETs and one capacitor to integrate the pixel structure in the restricted pixel area (12.6 m × 4.2m) and uses the source follower to control extremely low level current. The simulation results show that the maximum error of emission current occurs at high gray level and the maximum error is 2.7 LSB under ±5 mV power fluctuation and ±10 mV threshold voltage variation conditions. 1. Introduction follower for analog voltage driving method. The organic light emitting diode (OLED)-on-silicon (OLEDoS) displays use the complementary metal oxide 2. Proposed pixel structure semiconductor (CMOS) process as a backplane.1-3) OLEDoS The proposed pixel structure can be realized by Fig. 1 and displays have been developed as a part of the microdisplays Fig. 2. The proposed pixel structure of Fig. 1 is composed of such as projector implemented in cellular phones, viewfinders two pMOSFETs (P1 and P2) a