How 3D NAND Stacks Up Forward Insights（3 d NAND栈,提出见解如何）.pdf

How 3D NAND Stacks Up Report No. FI-NFL-3DM-0114 How 3D NAND Stacks Up © 2014 Forward Insights. All Rights Reserved. Reproduction and distribution of this publication in any form in whole or in part without prior written permission is prohibited. The information contained herein has been obtained from sources believed to be reliable. Forward Insights does not guarantee the accuracy, validity, completeness or adequacy of such information. Forward Insights will not be liable for any damages or injuries arising from the use of such information including, without limitation, errors, omissions or inadequacies in the information contained herein or for the interpretation thereof. The opinions expressed herein are subject to change without notice. © Forward Insights ii How 3D NAND Stacks Up Contents CONTENTS III  LIST OF FIGURES VI  LIST OF TABLES XII  EXECUTIVE SUMMARY 1  INTRODUCTION 3  NAND FLASH MEMORY 4  NAND Flash Memory Technology Evolution 4  Floating Gate Memory Cell Scaling Challenges 7  Program Voltages and WL-WL Dielectric Breakdown 7  Number of Floating Gate Electrons, Charge Cross-talk, and Random Telegraph Noise 9  IPD Scaling of Electrical Thickness and Program Saturation: Can a Planar Cell be a Solution? . 10  NAND alternative: Charge Trapping Memory Cell 13  3D NAND ALTERNATIVES 20  Conventional Approach 20  Samsung Stacking by Single Crystal Deposition 20  Concept 21  Advantages and Disadvantages 25  Challenges 26  Nonconventional approach 30  Horizontal channel – horizontal gate 30  Concept 30  Advantages/Disadvantages 33