IGBT Drive Using MOSFET Gate Drivers TI（IGBT驱动使用MOSFET栅极驱动程序 TI）.pdf

DN-35 Design Notes IGBT DRIVE USING MOSFET GATE DRIVERS John A. O’Connor IGBT Drive Requirements opposing devices can occur in such circuits, often Insulated gate bipolar transistors (IGBTs) are with catastrophic results if proper gate drive and gaining considerable use in circuits requiring high layout precautions are not followed. This behavior is voltage and current at moderate switching caused by parasitic collector to gate (miller) frequencies. Typically these circuits are in motor capacitance, effectively forming a capacitive divider control, uninterruptible power supply and other with the gate to emitter capacitance and thus similar inverter applications. Much of the IGBTs inducing a gate to emitter voltage as illustrated in popularity stems from its simple MOSFET-like gate figure 1. drive requirement. In comparison to bipolar When high off-state dv/dt is not present, the IGBT transistors which were formally used in such can be driven like a MOSFET using any of the gate designs, the IGBT offers a considerable reduction in drive circuits in the UC37XX family as well as from both size and complexity of the drive circuitry. the drivers internal to many switching power supply Recent improvements in IGBT switching speed has controllers. Normally 15 volts is applied gate to yielded devices suitable for power supply