Investigation of Temperature Field and Melt （对温度场和融化）.pdf

International Scientific Colloquium Modelling for Electromagnetic Processing Hannover, March 24-26, 2003 Investigation of Temperature Field and Melt Flows in Large- Diameter CZ Silicon Modelling Experiments with Impact of Magnetic Fields L. Gorbunov, A. Pedchenko, A. Feodorov Abstract Physical simulation of Czochralski silicon crystal growth (CZ) is presented. The hydrodynamics and heat transfer in CZ for Re and Gr criteria being equal to the values of these criteria in the silicon crystal growth process and so implementing the real boundary conditions for the heat flows both on the walls and bottom of the crucible and on the melt free surface were studied. Maximum approximation to large diameter silicon single crystal growth is the main achievement of the presented method. The results of the hydrodynamics and heat transfer simulation for a 300-mm silicon crystal pulled from a 700-mm crucible are discussed. Introduction Semiconductors are an integral part of the modern electronic industry. The mostly widespread nowadays is single-crystalline silicon (Si), which is used as a basic raw material for the production of integrated circuits. The main bulk of silicon for electronic industry (more than 90%) is produced by means of ingot pulling from the melt - the Czochralski (CZ) method. The main problem of the technology is unstable melt convection that leads to the fluctuations of the growth rate and, subsequently, to the inhomogeneity of dopant concentration along the axis and diameter of the growing crystal.