ICP蚀刻分析.ppt

北京创世威纳科技有限公司;;刻蚀：;湿法刻蚀与干法刻蚀;Wet Etching Characteristics Advantages: Simple equipment High throughput High selectivity Disadvantages: Isotropic etching leads to undercutting Chemical costs are high Disposal cost are high;干法刻蚀是利用射频电源使反应气体生成反应活性高的离子和电子，对硅片进行物理轰击及化学反应，以选择性的去除我们需要去除的区域。被刻蚀的物质变成挥发性的气体，经抽气系统抽离，最后按照设计图形要求刻蚀出我们需要实现的深度 ;Dry Etching Characteristics Advantages: Anisotropic etch profile is possible Chemical consumption is small Disposal of reaction products less costly Suitable for automation, single wafer, cassette to cassette Disadvantages: Complex equipment, RF, gas metering, vacuum, instrumentation Selectivity can be poor Residues left on wafer;刻蚀工艺的相关参数;选择比 同一刻蚀条件下，被刻蚀材料的刻蚀速率与另一种材料 的刻蚀速率的比。;刻蚀剖面 被刻蚀图形的侧壁形状;ICP 刻蚀：Inductively Couple Plasma Etch 感应耦合等离子体刻蚀;电感耦合等离子体（ICP）刻蚀原理;刑庞唇拯暇去男旦右法个美侦蚊郴逃檬觉毫沽启凭秸赔剥脊灵氧壮蔷抛有ICP蚀刻分析ICP蚀刻分析;Etchants and etch products;BOSCH ICP ;Deep dry etching;刻蚀相关参数;刻蚀注意事项;谢谢！