A Hybrid 3D Quantum Mechanical Simulation of （混合三维量子力学模拟的）.pdf

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices Xue Shao and Zhiping Yu Institute of Microelectronics, Tsinghua University, Beijing 100084, China shaox97@mails.tsinghua.edu.cn Abstract In this paper, we have carried out a numerical simulation of FinFETs. The model is based on 1D non-equilibrium Green’s function (NEGF) along the channel and 2-D Schr¨odinger equation in the confined cross section and provides insights into the per- formance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal - characteristics with great potential in scalability even when the gate length is below 5 nm with 2-by-2 nm channel cross section. 1 Introduction Double gate (DG) or triple gate (commonly known as FinFETs) MOSFETs possess su- perior gate controllability in both off and on states. Their (for DG, it is restricted to vertical type only) compatibility with the planar process makes them the strong con- tender in sub-65nm CMOS technology nodes. There has been extensive research work performed regarding DG-FETs, e.g., in [1]. For FinFETs or nanowire devices, because of the 3D nature of the structure, it is a formidable task to solve the current-carrying Schr¨odinger equation directly, even with methods like NEGF [2]. In this work, we present a hybrid approach to the quantum mechanical (QM) simulation of 3D FinFET/nanowire structures, which captures the carrier confinement in the cross- section of the fin/wire and the ballistic (including tunneling) transport along the channel direction. The computation cost for a sub-20 nm FinFET is quite affordable. Compared with the DG structure, FinFETs shows a better scalability and ratio. The scal- ing limit is also revealed (it all depends on the channel length/cross-section dimension aspect ra