GAT实现高频率与高基区穿通电压兼容特性分析-Core.PDF

第20卷　第2期 Vol.20,No.2 　　　　　 2000 年5 月 RESEARCH PROGRESS OF SSE ay., 2000 GAT 庄宝煌　黄美纯　朱梓忠　李开航 (, 361005) , : GAT , , GAT V PI : ;; ; :T N323. 4: A:1000-3819( 2000)02-0190-05 An Analysis of GAT s Compatibility Between High Frequency and High Base Region Punchthrough Voltage Zhuang Baohuang Huang eichun Zhu Zizhong Li Kaihang (D ep t .of P hy s . ,X iamen Univ ., 361005, CH N ) Abstract: By the aid of the two-dimensional analytical model of the electric potential and field distribution in GATs collector depletion space in a cut-off state which was established by the writers lately the GAT s base region punchthrough, voltage V PI was investigated quantitatively, and the experimental results which concluded that the GATs can realize the compatibility between high frequency and high voltage were explained. ey words power device GAT base region punchthrough compatibility: ; ; ; EEACC:2560F 1　GAT 栅屏蔽效应二维解析模型简介 [ 1] H. Kondo GAT (Gate associated transistor) [2] GAT , GAT , (No06) (863-715-010) .GAT ., 1984 12 2 : GAT 191 GAT GAT ,GAT [3] GAT GAT 1V cbVp , [ 1]