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power device课件
Power MOSFET design and technology;? Power devices : application fields
? Power MOS : structure and technology
? Technological Road-map HV and LV devices
;APPLICATION FIELDSOF POWER DEVICES;APPLICATION FIELDS FOR POWER DEVICES ;Frequency [Hz];POWER MOSFETSTRUCTURE AND TECHNOLOGY;X ~ 600 mm;N+;N+;N+;N+;N+;N+;P+;Body (Boron) ionic implant
Body diffusion;Source (As,P) ionic implant;Channel making (3);Contacts photolithography (mask and etch);Passivation;Back finishing process steps;Passivation (Nitride);N++;N++;3D PMOS structure ;PMOS layout
(STW15NB50);PMOS : 2D simulation result in a single strip; PARASITIC ELEMENTS
INSIDE
POWERMOS STRUCTURE;D;D;G;G;D;POWER MOS
CURRENT CAPABILITY;G;G;VGS VTH
VDS 0;VDS [V];Drain current Vs Gate voltage;VDS [V];The PMOS structure has parasitic bipolar element
inside.;Power MOS :
OUTPUT resistance analysis
(RDSon);D;Repy;Repy;Lc;Rc = ;Racc = ;Rj-fet = f( ) ;In the Low Voltage Power MOS (BVdss ≤100 V)
You can decrease the Rdson with:
strip high density
VLSI process;BVDSS [ V ];Low Voltage PMOS:
the VLSI technology;;;Power MOSFET
SWITCHING;In a Power MOSFET, the switching time
depends on:;RG;R’G;R”G;G;PARASITIC CAPACITORS (INSIDE THE STRUCTURE);D;G;G;G;G
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