2010低介电常数纳米氧化硅薄膜_英文_.pdf

第 39 卷 增刊 2 稀有金属材料与工程 Vol.39, Suppl.2 2010 年 8 月 RARE METAL MATERIALS AND ENGINEERING August 2010 Low Dielectric Constant Nanoporous Silica Films 1 1 1 1 1 1 Shen Jun , Zhu Yumei , Lin Xuejing , Wu Guangming , Zhou Bin , Ni Xingyuan , 2 3 3 3 4 Yao Lanfang , Wang Guoqing , Wang Peiqing , Wang Qingfeng , Niu Xixian (1. Tongji University, Shanghai 200092, China) (2. University of Shanghai for Science and Technology, Shanghai 200093, China) (3. Shanghai Sunvea Chemical Material Co. Ltd., Shanghai 200235, China) (4. Zhongxing Electric Automobile Corporation, Shanghai 200433, China) Abstract: A novel route to prepare low-dielectric constant mesoporous SiO films was reported. Silicate sols were prepared 2 with the precursor of TEOS and template of CTAB catalyzed by hydrochloric acid. The films were prepared by dip-coating process. FTIR, XRD and AFM were employed to characterize the films. The dielectric constants were measured by impedance analysis apparatus. These films with dielectric constants smaller than 2.2 could be acquired by adjusting the concentration of CTAB and aging time. Key words: low dielectric constant; thin films; sol-gel process CLC number: O78