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第二章 掺杂技术(The second chapter doping technology).doc

第二章 掺杂技术(The second chapter doping technology).doc

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第二章 掺杂技术(The second chapter doping technology)

第二章 掺杂技术(The second chapter doping technology) The second chapter doping technology Objective: to reconstruct the electrical characteristics of Semiconductors Definition: the artificial method is used to incorporate the required impurities into a specified area of the semiconductor substrate in a certain manner and to achieve a specified quantity and conformity to the required distribution. Applications: making PN junction, resistance in IC, ohmic contact area, silicon gate, polysilicon interconnect line Methods: thermal diffusion and ion implantation Section 1 diffusion Definition: the doped gas is introduced into a high temperature furnace with silicon wafers, so as to achieve the purpose of diffusing impurities into the silicon wafer. Method: Liquid source diffusion Powder source diffusion Sheet source diffusion Diffusion of latex source Diffusion of solid source (CVD doped SiO2) Section 1 diffusion Diffusion principle In essence, diffusion is the statistical result of microscopic particles undergoing irregular thermal motion. Direction: high concentration to low concentration diffusion. The 1. Fick first law of J=-D at N D - diffusion coefficient (cm2/s) At N concentration gradient - - diffusion from high concentration to low concentration J diffusion current density Section 1 diffusion 2. diffusion model (institution) Energy Pohl Seidman distribution of impurity atoms Gap diffusion - impurity motion in the interstitial space Substitution (substitution) diffusion - impurity atoms move from one lattice point to another Premise: there is an empty space near the grid Diffusion principle 3. diffusion coefficient D=D0, exp (-Ea, /kT) D0 - apparent diffusion coefficient, the diffusion coefficient is 1/kT to 0 Ea - activation energy; gap diffusion: Ea = Ei, Substitutional diffusion: Ea = Es+ Ev D is a physical quantity describing the speed of particle diffusion, and is a macroscopic description of microscopic diffusion. Diffusion principle D is inversely proportional t

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