Supertex inc. TC6320 EnhancementMode (我们公司TC6320 EnhancementMode).pdf

Supertex inc. TC6320 EnhancementMode (我们公司TC6320 EnhancementMode).pdf

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Supertex inc. TC6320 EnhancementMode (我们公司TC6320 EnhancementMode)

Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► Integrated GATE-to-SOURCE resistor The Supertex TC6320 consists of high voltage, low threshold ► Integrated GATE-to-SOURCE Zener diode N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN ► Low threshold packages. Both MOSFETs have integrated GATE-to-SOURCE ► Low on-resistance resistors and GATE-to-SOURCE Zener diode clamps which are ► Low input capacitance desired for high voltage pulser applications. It is a complimentary, high-speed, high voltage, GATE-clamped N- and P-channel ► Fast switching speeds MOSFET pair, which utilizes an advanced vertical DMOS ► Free from secondary breakdown structure and Supertex’s well-proven silicon-gate manufacturing ► Low input and output leakage process. This combination produces a device with the power ► Independent, electrically isolated N- and handling capabilities of bipolar transistors and with the high P-channels input impedance and positive temperature coefficient inherent in Applications MOS devices. Characteristic of all MOS structures, this device

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