紫外探测器和其研究进展.pdfVIP

35 11 Vol. 35, No. 11 2005 11 LASER INFRARED Novem ber, 2005 : 2005) 1 1 1 1 1 1 1 2 2 龚海梅, 李向阳, 亢 勇 , 许金通, 汤英文, 李 雪 , 张 燕, 赵德刚, 杨 辉 ( 1. , , 200083; 2. , 100083) : 文中简单介绍了紫外波 光电探测的基本特点, 包括各波 特点大气吸收等, 并粗略 介绍了紫外探测的部分应用然后对族氮化物宽禁带紫外探测器材料体系的研究进展进行 了回顾, 重点介绍了包括 型材料的制备金属半导体接触材料的蚀刻等方面; 最后, 对国内 外近期的紫外探测器特别是紫外焦平面器件的研究进展作了一些评述 : 紫外探测器; 氮化镓; 铝镓氮; 紫外焦平面器件 + : TN304. 2, TN364 . 2 : A N itride U ltraviolet Photodetectors and the R esearch Developm ent 1 1 1 1 1 1 1 GONG Haimei, LIXiangyang , KANG Yong, XU Jintong , TANG Yingwen , LIXue, ZHANG Y an , 2 2 ZHAO Degang , YANG H ui ( 1. State key Laboratories of Transducer Technology, Shanghai Institute of Technical hysics, ChineseA cademy of Sciences, Shanghai 200083, China; 2. Institute of Sem iconductor, ChineseA cademy of Science, Beijing 100083, China) A b stract: The research progress ofN itride promotes the developm ent and the app lication of all kind GaNbased de vices. Especially, the GaNbased ultraviolet photodetector can adjust the cu toffwavelength through changing the A l content in the A l Ga N m aterials. And the A l Ga N w ith high A l content can be used to fabricate the solarblind x 1- x x 1- x photodetectors, which induces our attention greatly. The basic characters of the u ltraviolet photodetector, including the u ltravioletwavelength and atm osphere absorption, etc, are presented bri