石墨烯PN结的电流理论特性研究.doc

本 科 生 毕 业 论 文（设计） 石墨烯PN结的电流理论特性研究 Theoretical study of electronic transport properties of graphene PN junctions 姓名与学号 3071102254 指导教师 年级与专业 电子科学与技术07级 所在学院 信息与电子工程学系 摘要关键：positive current and suppressing negative current, also there are some novel phenomena in graphene PN junctions that are different from traditional PN junctions. We also inspect the situations where h-BN substrate was used. PN junctions are very importing in electronic and optoelectronic devices, and the study of graphene PN junctions will put forward the development of graphene electronics, a very promising technology in the post-Silicon era. Keywords: graphene PN-junction doping first-principles BN Content 1. Introduction 1 2. Method 2 3. Results 8 3.1 Doping graphene with metal contacts 8 3.2 Cu|graphene – Au|graphene PN junction 10 3.3 Cu|graphene – Pt|graphene PN junction 13 3.4 Cu|graphene|BN – Au|graphene|BN PN junction 15 3.5 Cu|graphene|BN – Pt|graphene|BN PN junction 17 3.6 Cu-graphene junction 18 4. Conclusion 19 5. Acknowledgement 20 References 20 Appendix 22 1. Introduction Graphene, a monolayer material consists of carbon atoms tightly packed into honeycomb lattices, has been the focus of many heated researches since its first discovery in 2004 by A.K.Geim and K.S.Novoselov[1]. As a novel material, graphene has several outstanding properties that make it promising in various kinds of applications[2][3]. Among them, the application of graphene in micro-/nano-electronic devices has attracted much attention. Graphene has many good and unique electrical properties that fit the development of better devices. For instance, the mobili