半导体器件中英名词解释.pdf

abrupt junction approximation: The assumption that there is an abrupt discontinuity in space charge density between the space charge region and the neutral semiconductor region. 突变结近似：认为从中性半导体区到空间电荷区的空间电荷密度有一个突然地不连续。 depletion layer approximation: The space charge regions have abrupt boundaries, and the semiconductor is neutral outside of the depletion region. 耗尽层近似：空间电荷区边界存在突变，且耗尽层以外区域电中性。 metallurgical junction: The interface between the p- and n-doped regions of a pn junction. 冶金结：pn结内p型掺杂与n型掺杂的分界面。 one-sided junction : A pn junction in which one side of the junction is much more heavily doped than the adjacent side. 单边突变结: 若pn结两侧为均匀掺杂，即有浓度分别为 和 的p型半导体和n型半导体组 成的pn结，称为突变结。若一边掺杂浓度远大于另一边的掺杂浓度，即 或 ， 这种pn结称为单边突变结。 linearly graded junction: A pn junction in which the doping concentrations on either side of the metallurgical junction are approximated by a linear distribution. 线性缓变结：冶金结两侧的掺杂浓度可以由线性分布近似的pn结。 hyperabrupt junction: A pn junction in which the doping concentration on one side decreases away from the metallurgical junction to achieve a specific capacitance– voltage characteristic. 超突变结：一种为了实现特殊电容-电压特性而进行冶金结处高掺杂的pn结，其特点是pn结 一侧的掺杂浓度由冶金结处开始下降。 built-in electric field: An electric field due to the separation of positive and negative space charge densities in the depletion region. 内建电场：由于耗尽区正负空间电荷相互分离而形成的电场。 built-in potential barrier: The electrostatic potential difference between the p and n regions of a pn junction in thermal equilibrium. 内建电势差：热平衡状态下pn结内p 区与n 区的静电电势差。 depletion region/space charge region/barrier region: The region on either side of the metallurgical junction in which there is a net charge density due to ionized donors in the n region and ionized acceptors in the p region. 耗尽区/空间电荷区/势垒区：pn结界面两侧半导体中的载流子由于存在浓度差