at65609ehw_抗辐射存储器.pdf

Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW (Max) – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous 2 • No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm @125°C Rad. Tolerant • Radiation Tolerance(1) – Tested up to a Total Dose of 300 krads (Si) 8K x 8 - 5 volts – RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019 • ESD better than 4000V Very Low Power • Deliveries at least equivalent to QML procurement according to MIL-PRF38535 • AT65609EHW is pin to pin compatible with MA9264 device from DYNEX CMOS SRAM Note: 1. tolerance to MBU’s may need to be enhanced by the application Description AT65609EHW The AT65609EHW is a very low power CMOS static RAM organized as 8192 x 8 bits. Using an array of six transistors (6T) memory cells, the AT65609EHW combines an extremely low standby supply current with a fast access time at 40 ns over the full mil- itary temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The AT65609EHW is processed according to the methods of the latest revision of the MIL PRF 38535. It is manufactured on the same process as the MH1RT RAD-hard sea of gates series. 7791D–AERO–11/13 Block Diagram Vcc