电化学刻蚀多孔硅阵列的形貌研究.PDF

34 11 Vol.34 No.11 2015 11 ELECTRONIC COMPONENTS AND MATERIALS Nov. 2015 1 1 2 1 1 P P 30~50 Ωcm20×10–3 A/cm2 2.5 μm4 μm CTAC X X doi: 10.14106/ki.1001-2028.2015.11.012 TQ035 TL816+ .1 A 100111-0048-05 Morphology study of electrochemically etched silicon pore array 1 1 2 1 1 CHEN Tingting , GU Mu , YU Huaina , LIU Xiaolin , HUANG Shiming (1. Shanghai Key Laboratory of Special Artificial Microstructure Materials Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; 2. Shanghai Institute of Applied Physics, Chinese Academy of Science, Shanghai 200092, China) Abstract: Pore array was fabricated in P-type silicon wafers by electrochemical etching. By experimental research and theoretical analysis, influences of silicon resistivity, current density and electrolyte addition on pore formation were discussed. Results show that resistivity of P-type silicon is decisive in pore formation and pore diameter can be modulated by varied current density; silicon wafers with a resistivity of 30–50 Ωcm are optimal for pore formation with the current –3 2 density being at 20×10 A/cm . With assistance of pattern guiding, ordered silicon pore arrays with uniform size are obtained. The pore diameter is