PECVD薄膜颗粒缺陷研究和改善-中国科技论文在线.PDF

中国科技论文在线 PECVD 薄膜颗粒缺陷研究和改善 王铁渠，黄其煜* （上海交通大学电子信息与电气工程学院，上海 200240 ） 5 摘要：在半导体集成电路制造PECVD 工艺中，经常会遇到薄膜颗粒缺陷问题。本论文总结 了PECVD 中薄膜颗粒的类型和形成原因以及改善方法。PECVD 工艺中的薄膜颗粒缺陷分 类主要分为掉落颗粒（fall on particle ）缺陷和成膜颗粒（in-film particle ）缺陷。造成fall on particle 缺陷的原因主要是机械传送过程中的刮擦或 PECVD 化学反应腔不清洁。 In-film 10 particle 缺陷的的主要原因是PECVD 化学反应腔或气体管路腔密封不严导致外界氧气混入， 化学反应提前发生所造成。针对fall on particle 缺陷, 改善的方法是PECVD 机台定期预防保 养，传送机械手位置校准和易损部件更换，而对于in-film particle defect, 必须保证PECVD 化学反应腔和气体管路密封性良好。 关键词：薄膜；等离子体增强化学气相淀积；颗粒缺陷 15 中图分类号：TQ110.6 PECVD particle defect research and improvement WANG Tiequ, HUANG Qiyu (School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University, 20 Shanghai 200240) Abstract: In PECVD process of semicondutor integrated circuit manufacturing, it often encounted particle defect issues. The type and root cause and improvement of particle defect have been summarized in this paper. There are two types of particle defect, one is fall on particle defect, the other is in-film partciel defect. The root cause of fall on particle defect is mostly scratch during wafer transfer 25 or process chamber not clean enough. The root cause of in-film particle defect is mostly process chamber leak or process gas line leak which induces chemical reaction prior to plasma turn on. The fall on particle defect can be improved by preventive maintenace such as hand-off position calibration and replace the consumable parts. The in-film particle defe