RbTiOAsO4晶体中的生长缺陷和生长机制.pdfVIP

人工晶体学院990302 人工晶体学报 JOURNAL OF SYNTHETIC CRYSTALS 1999年 第28卷 第3期 Vol.28 No.3 1999 RbTiOAsO晶体中的生长缺陷和生长机制 4 胡小波　王继扬　魏景谦　崔伟红　刘　宏　刘耀岗 提要：采用熔盐法生长了大尺寸RbTiOAsO晶体。利用同步辐射形貌术和化学腐蚀 4 法，研究了RbTiOAsO晶体中的生长缺陷。发现该晶体中的生长缺陷主要为生长位错 4 和生长扇界，大部分位错沿［100］方向，Burgers矢量为［001］。在扫描电镜下，对 原生RbTiOAsO晶体的表面形态进行了观察，根据其表面二次电子像的特征，对不同 4 晶面的生长控制机制进行了讨论。 关键词：RbTiOAsO晶体，位错，生长扇界，生长机制，同步辐射形貌术，非线性光 4 学晶体 中图分类号：O782.4；O772 Growth Defects and Growth Mechanisms of RbTiOAsO Crystals 4 Hu Xiaobo　 Wang Jiyang　 Wei Jingqian　Cui Weihong　Liu Hong　Liu Yaogang (State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China) (Received 28 April 1999) Abstract ：RbTiOAsO4 crystals with large dimensions were grown by means of flux method. Using synchrotron radiation X-ray topography and chemical etching method,the growth defects in RbTiOAsO4 crystals were investigated.It was found that grown-in dislocations and growth sector boundaries are the predominant defects in the crystals.the majority of dislocations are along the ［100］ lines,and Burgers vector is ［001 ］ direction.The morphology of surfaces of as-grown RbTiOAsO4 crystals were observed by scanning electron microscope.Based on the features of secondary electron images of different surfaces, the growth mechanisms of RbTiOAsO4 crystals were discussed. Key words:RbTiOAsO4 crystal,dislocation,growth sector boundary,growth mechanism, synchrotron topography，nonlinear optical crystal 1　引　　言 file:///E|/qk/rgjtxb98/rgjt99/rgjt9903/990302.htm（第 1／8 页）2010-3-23 5:45:18 人工晶体学院990302 　　众所周知KTiOPO 4 晶体是优良的非线性光学晶体。它有许多优良的物理性质， 如：高非线性光学系数，宽透明范围，高激光损伤阈值。这些性质使KTP晶体特别适