利用EBSD分析电流密度对盲孔中电镀铜微结构的影响-中国鑛冶工程.PDF

利用EBSD分析電流密度對盲孔中電鍍銅 微結構的影響 EBSD Analysis of Current Density Effect on the Microstructure of the Electrolytic Cu Deposition in the Blind-hole Structure 1 1 1 2 J.S. Chang, C.C. Chen, M.K. Lu, C.E. Ho (semiconductor) Electrolytic Cu plating in the blind-hole (printed circuit board, PCB) (BH) structure has become a critical process (three-dimensional integrated circuit, 3D IC) for the high-density-interconnection (HDI) (high-density-interconnection, HDI) technologies associated with advanced printed circuit board (PCB). This paper demonstrated (through-hole) (blind-hole) the effect of current den sity (j ) on the Cu electr odep osit ion in a BH stru ctur e . We X (transmission investigated the Cu microstructures resulting X-ray microscope, TXM) fr om j = 2 , 4 , 5, an d 6 A/ dm2 by u sin g (field-emission scanning electron microscope, transmission X-ray microscopy (TXM) and FE-SEM) (electron field-emission scanning electron microscopy backscatter diffraction, EBSD) (FE - SEM) in comb in at ion w ith electr on (j = 2, 4, 5 6 A/dm2) b ack scatt er diffr act ion (EB SD) . Re su lt s showed that the Cu deposition morphology an d th e cor r e sp on din g cr y st allogr ap h ic ch ar a ct er i st i c s ( e .g ., cr y st a l l og r ap h i c orientation and grain boundaries) were strongly affected by j . These observations revealed that / j plays an important role in determ