500V沟槽阳极LIGBT的设计与优化-北京工业大学学报.PDF

第38卷 第8期 北 京 工 业 大 学 学 报 Vol.38 No.8 2012年 8月 JOURNAL OF BEIJING UNIVERSITY OFTECHNOLOGY Aug. 2012 500V沟槽阳极LIGBT 的设计与优化 邵摇 雷,李摇 婷,陈宇贤,王摇 颖 (哈尔滨工程大学 信息与通信工程学院,哈尔滨摇 150001) 摘摇 要:介绍一种双外延绝缘体上硅(silicon on insulator,SOI)结构的沟槽阳极横向绝缘栅双极型晶体管(trench anode lateral insulated鄄gate bipolar transistor,TA鄄LIGBT). 沟槽阳极结构使电流在N型薄外延区几乎均匀分布,并减 小了元胞面积;双外延结构使漂移区耗尽层展宽,实现了薄外延层上高耐压低导通压降器件的设计. 通过器件建模 与仿真得到最佳TA鄄LIGBT 的结构参数和模拟特性曲线,所设计器件击穿电压大于500V,栅源电压V =10V时导 gs 2 通压降为0郾2V,特征导通电阻为123郾6m赘·cm . 关键词:沟槽;横向绝缘栅双极晶体管;击穿电压;导通压降;阈值电压;特征导通电阻 中图分类号:TN342郾4 文献标志码:A 文章编号:0254-0037(2012)08-1153-05 Design and Optimization of500V Trench Anode LIGBT SHAO Lei,LI Ting,CHEN Yu鄄xian,WANG Ying (College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China) Abstract:Atypeof silicononinsulator (SOI)trenchanodelateralinsulated鄄gatebipolartransistor (TA鄄 LIGBT)with dual鄄epi layers is introduced in this paper. TA鄄LIGBT exploits the structure of trench electrode to decrease the cell size and the current flowlines of TA鄄LIGBT are uniformly distributed in the N鄄drift region. TA鄄LIGBT has achieved lower on鄄state drop and higher breakdown voltage on thin epitaxial layer because dual鄄epi layer can widen the depletion region. Optimal structure is obtained for 500V TA鄄LIGBT through simulation. Characteristics of the device are also given. Results show that the device has a breakdown voltageabove500V,aforwardvoltageof0郾2Vfor V of 10V,andthe specific