分子束外延用碲锌镉(211)B衬底表面预处理技术.pdfVIP

第39 卷 第 8 期 红 外 技 术 Vol.39 No.8 2017 年 8 月 Infrared Technology August 2017 分子束外延用碲锌镉(211)B 衬底表面预处理技术 吴亮亮 （华北光电技术研究所，北京 100015 ） 摘要：本文主要分析了作为分子束外延碲镉汞的碲锌镉衬底的表面预处理工艺。湿化学处理工艺主 要目的是去除衬底表面损伤层，0.5%溴甲醇溶液的腐蚀速率为7 nm/s ，但腐蚀的同时会形成表面富 Te 层和氧化层，氧化层的厚度随溴甲醇的浓度增加而增加；高温热处理工艺主要是消除湿化学腐蚀 形成的富Te 层和氧化层，340 ℃的高温处理可去除表面氧化层；也可以直接通过回旋共振等离子体 处理衬底表面，形成化学计量比正常的干净表面。 关键词：碲锌镉；表面预处理；湿化学腐蚀；热处理；回旋共振 中图分类号：TN304 文献标识码：A 文章编号：1001-8891(2017)08-0688-06 Pretreatment of CdZnTe(211)B Substrates for MBE WU Liangliang (North China Research Institute of Electro-optics, Beijing 100015, China) Abstract ：This article discusses the surface pretreatment processes for CdZnTe, which is used as a substrate for HgCdTe grown by molecular beam epitaxy. The main purpose of the wet chemical treatment process is to remove the surface damaged layer of the substrate. The etch rate of 0.5% Br-MeOH is approximately 7 nm/s; however, after the etch process, a Te-rich layer and an oxide layer will be formed on the surface. The thickness of the oxide layer increases with the increase in the concentration of Br-MeOH. The major purpose of the high-temperature thermal treatment process is to eliminate the Te-rich layer and the oxide layer formed by wet chemical etching. Thermal treatment at 340 ℃ can eliminate the oxide layer. The substrate surface can also be directly treated using cyclotron resonance plasma to form a normal stoichiometric clean surface. Keywords ：CdZnTe ，surface pretreatment ，wet etching ，thermal treatment ，elect