引用 2010 Si基非常好omparative study of InGaAs integration on bulk Ge and virtual Ge-Si(1 0 0) substrates for low-cost photovoltaic applications 1-s2.0-S0927024810004733-main.pdfVIP

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引用 2010 Si基非常好omparative study of InGaAs integration on bulk Ge and virtual Ge-Si(1 0 0) substrates for low-cost photovoltaic applications 1-s2.0-S0927024810004733-main.pdf

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引用 2010 Si基非常好omparative study of InGaAs integration on bulk Ge and virtual Ge-Si(1 0 0) substrates for low-cost photovoltaic applications 1-s2.0-S0927024810004733-main

Solar Energy Materials Solar Cells 94 (2010) 2362–2370 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications Richard Beeler a, Jay Mathews b, Change Weng a, John Tolle a, Radek Roucka a, A.V.G. Chizmeshya a, b b ´ ´ b a,n Reid Juday , Sampriti Bagchi , Jose Menendez , John Kouvetakis a Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287, USA b Department of Physics, Arizona State University, Tempe, AZ 85287, USA a r t i c l e i n f o a b s t r a c t Article history: Ge virtual substrates have been developed via low-temperature CVD based on new hydride molecular Received 7 July 2010 chemistry routes fully compatible with conventional CMOS. These are designed to enable integration of Received in revised form III–V compounds directly on Si and therefore have the potential to replace expensive Ge wafers in 11 August 2010 multijunction photovoltaics grown on the conventional 4–600 format. Here we ﬁrst describe in detail the Accepted 14 August 2010 Available online 17 September 2010 protocols needed to produce defect-free and atomically ﬂat Ge buffers with 0.25–3 mm thicknesses directly on vicinal (51, 81) and on-axis Si (1 0 0) substra