MSN1014W台湾摩矽MOS管MSN1014W台湾摩矽MOS管.pdf

MSN1014W 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● V =100V,I =14A DS D RDS(ON)=8.8mΩ (typical) @ VGS=10V RDS(ON)=9.8mΩ (typical) @ VGS=4.5V ● Excellent gate charge x RDS(on) product(FOM) Lead Free ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification Marking and pin assignment PIN Configuration Schematic diagram SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN1014W MSN1014W SOP-8 - - 2500 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS