Al_Sc共掺杂ZnO透明导电薄膜的掺杂机制.docx

2011 年 7 月JOURNAL OF THE CHINESE CERAMIC SOCIETYJuly ， 2011 Al–Sc 共掺杂 ZnO 透明导电薄膜的掺杂机制陈建林 1，陈 荐 1，何建军 1，任延杰 1，邱 玮 1，陈振华 2(1. 长沙理工大学，能源高效清洁利用湖南省高校重点实验室，长沙 410114；2. 湖南大学材料科学与工程学院，长沙 410082)摘 要：采用溶胶–凝胶法制备 Al–Sc 共掺杂 ZnO 透明导电薄膜，考察了结晶性、晶界状态、紫外–可见光透射光谱及 Hall 效应，并讨论其掺杂机制，结果表明：Sc 单独掺杂时，晶粒尺寸变小，结晶性变差，晶粒表面包裹一层非晶相，透射光谱存在较大的吸收谷，无导电性；Al–Sc 共掺杂时，晶粒 表面无非晶相，c 轴择优取向性和晶界状态变优，透射光谱无大的吸收谷，载流子迁移率比 Al 掺杂 ZnO 薄膜增大约 1 个数量级。关键词：氧化锌；透明导电氧化物；掺杂机制；溶胶–凝胶；太阳电池中图分类号：TB34文献标志码：A文章编号：0454-5648(2011)07–1112–06Doping Mechanism of Al–Sc Co-Doped ZnO Transparent Conductive Thin FilmsCHEN Jianlin1，CHEN Jian1，HE Jianjun1，REN Yanjie1，QIU Wei1，CHEN Zhenhua2(1. Key Laboratory of Efficient Clean Energy Utilization, College of Hunan Province, Changsha University of Science Technology, Changsha, 410114; 2. College of Materials Science Engineering, Hunan University, Changsha 410082, China)Abstract: Al–Sc co-doped ZnO transparent conductive thin films were prepared by sol–gel method. The crystallinity, grain bounda-ries, ultraviolet–visible transmittance spectra and Hall effect were investigated and the doping mechanism was discussed. The results show that when Sc is doped alone, the grain size is decreased and the crystallinity is significantly degraded with an amorphous phase on the grain surface; there is a large absorption valley in transmission spectrum and the films show no electrical conductivity. As for Al–Sc co-doped ZnO films, the c-axis-preferred orientation and the grain boundaries are greatly improved with no amorphous phase on the grain surface; there is no large absorption valley in transmission spectrum and the carrier mobility is raised by one order of magnitude compared with Al-doped ZnO film.Key words: zinc oxide; transparent conductive oxides; doping mechanism; sol–gel; solar cell用下，SnO2 易被原子氢还原[1]。为解决这一问题，人们开始研究新型透明导电膜，较为理想的材料是 氧化锌(ZnO)。ZnO 在氢等离子体中较为稳定，透 光率高，但本征 ZnO 的电导率不高，因此需要掺杂 来提高导电性。常用的掺杂元素是铝(Al)或镓(Ga)。Al 掺杂 ZnO(ZnO:Al，AZO)透明导电薄膜具有优 异的光电性能、丰富的原材料、低廉的价格、无毒等特点，被认为是替代 SnO2 薄膜最有潜力的材料[2–3