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Mechanism and control of sidewall growth and catalyst diffusion on oxide nanowire vapor-liquid-solid growth Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Hidekazu Tanaka, and Tomoji Kawai Citation: Applied Physics Letters 93, 153103 (2008); doi: 10.1063/1.2978347 View online: /10.1063/1.2978347 View Table of Contents: /content/aip/journal/apl/93/15?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Vapor-liquid-solid growth of Si nanowires: A kinetic analysis J. Appl. Phys. 112, 024317 (2012); 10.1063/1.4737597 Anharmonic phonon coupling in vapor-liquid-solid grown ZnO nanowires Appl. Phys. Lett. 95, 193111 (2009); 10.1063/1.3263709 Doping nanowires grown by the vapor-liquid-solid mechanism Appl. Phys. Lett. 95, 063105 (2009); 10.1063/1.3204543 Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane J. Appl. Phys. 103, 024304 (2008); 10.1063/1.2832760 Mechanism of catalyst diffusion on magnesium oxide nanowire growth Appl. Phys. Lett. 91, 061502 (2007); 10.1063/1.2768202 This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: /termsconditions. Downloaded to IP: 16 On: Thu, 02 Oct 2014 15:43:50 APPLIED PHYSICS LETTERS 93, 153103 2008 Mechanism and control of sidewall growth and catalyst diffusion on oxide nanowire vapor-liquid-solid growth Kazuki Nagashima, Takeshi Yanagida,a Keisuke Oka, Hidekazu Tanaka, and Tomoji Kawaib Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan Received 30 May 2008; accepted 17 August 2008; published online 13 October 2008 Oxide nanowires formed via the vapor-liquid-solid VLS mechanism are attractive building blocks toward nanowire-based electronic devices due to their fascinating physical properties. Although well-deTned oxide nanowires are strongly required for the applications, tapering during oxide nanowire VLS growth has been detrimental and uncontrollable.