塑胶基材非ITO透明导电膜镀膜技术.doc

塑膠基材非ITO透明導電膜鍍膜技術 Preparation and Characterization of Non-ITO film on plastic substrates by different deposited technology 黃天恒、趙文軒、吳仁傑(、王淑惠 工業技術研究院化學工業研究所Abstract Al doped ZnO films were deposited on PET and COC substrates with ALD (Atomic layer deposition) using diethylzinc, trimethylaluminium and water as reactants at a substrate temperature of 130 ( C. The electron mobility of Al doped ZnO film with the thickness of 146 nm was 2.78~10.7 cm2/V.s. Furthermore, a resistivity of 2.3~2.6x10-3 (-cm was obtained for the Al doped ZnO film with Al concentration of 1%.Ga doped ZnO films were deposited on PET and COC substrates with pulse laser deposition at a substrate temperature of 100 ( C. An electron mobility of 13.6~1.7 cm2/ Vs was obtained for GZO(Ga doped ZnO) film . A resistivity of 1.33~5.42 x10-3 (-cm was achieved for the GZO film with Ga concentration of 1~3 %. The AZO coated PET film is more transparent than the AZO coated COC film. The refractive index of Al doped ZnO film was 1.9497~2.18 measured by ellipsomertry. The transparency of AZO and GZO are close to the value of ITO. The interface between TCO film and PET substrate was investigated with ion beam XPS. The thickness of interphase between TCO and PET was estimated by analyzing the Al distribution with a SIMS. The Al concentration distribution exhibits a cyclic curve along the depth direction. This implies that the Al did not disperse in the film very well. Keywords: Transparent conductive films, Ga doped ZnO,Al doped ZnO 一、中文摘要 本研究主要針對目前具有發展潛力的Non-ITO透明導電膜（Ga doped ZnO、Al doped ZnO，以下分別簡稱為GZO及AZO）鍍膜與性能進行研究，前者以Pulse laser deposition (PLD)方法；而後者以Atomic layer deposition（ALD）方法進行鍍膜研究及分析。 以PLD方式在塑膠基材（PET films、COC films）表面鍍GZO透明導電膜，利用改變製程參數，如Substrate temperature、doping ratio、O2 pressure、Laser power output等，探討光學性質（Transmittance）及電性(比電阻、Carrier concentration及Mobility)對製程參數之關係。歸納結果可知在基材溫度低的情況下，所得到GZO鍍膜之比電阻均落在10-3 的range，未來仍需再進一步研究及探討，期使比電阻提升至10-4 order。O2 pressure大小，對穿透率的影響極大，因此O2 pressure對製程之鍍膜特性影響極