利用非对称闸极之不同遮蔽长度来提升奈米线穿隧-国家奈米元件实验室.PDF

3 014 Performance Enhancement of Nanowire Tunnel Field-Effect Transistor with Asymmetry-Gate based on Different Screening Length (AG-TFET) (Gate-all-around) (Screening length) -16 -5 (6.55 10 A/ m) (2.47 10 A/ m) (Subthreshold swing) 42 mV/dec. / 1010 Abstract This letter describes an asymmetric-gate tunnel fie ld effect transistor (AG-TFET) with a gate-all-around (GAA) structure in the source and a planar structure in the drain by -16 simulation study. It has a low o-state current (6.55 10 A/ m) and a high on-state -5 current (2.47 10 A/ m) because the screening length ( ) of a GAA nanowire (NW) structure is half that of the planar structure. Simulations reveal that a subthreshold swing (SS) as low as 42 mV/dec. and an on/o current ratio as higher as 1010 are realized. The AG-TFET is easily fabricated as an actual device by simply changing the layout of gate in a general TFET fabrication. Keywords Tunnel Field-effect Transistor Asymmetry-Gate Screening Length Band-to-band T