Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma assisted molecular beam epitaxy英文电子书.pdf

JOURNAL OF APPLIED PHYSICS VOLUME 96, NUMBER 2 15 JULY 2004 Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy a) ` N. Gogneau, D. Jalabert, E. Monroy, E. Sarigiannidou, and J. L. Rouviere ` ´ Departement de Recherche Fondamentale sur la Matiere Condensee, CEA-CNRS-UJF Research Group ‘‘Nanophysique et Semiconducteurs,’’ SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France T. Shibata and M. Tanaka Corporate Technical Center, NGK Insulators Ltd., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan J. M. Gerard and B. Daudin ` ´ Departement de Recherche Fondamentale sur la Matiere Condensee, CEA-CNRS-UJF Research Group ‘‘Nanophysique et Semiconducteurs,’’ SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France Received 8 April 2004; accepted 16 April 2004 The effects of AlN overgrowth on the structural properties of GaN nanostructures quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy, transmission electron microscopy, and reflection high-energy electron diffraction. The capping process induces a remarkable change in the dimensions of the nanostructures. The overgrowth process implies a thinning of the GaN quantum well and an isotropic reduction o