Experimental evaluation of microwave field effect transistor noise models HEYMANN英文电子书.pdfVIP

156 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 2, FEBRUARY 1999 Experimental Evaluation of Microwave Field-Effect-Transistor Noise Models Peter Heymann, Associate Member, IEEE, Matthias Rudolph, Helmut Prinzler, Ralf Doerner, Member, IEEE, Lars Klapproth, and Georg B¨ock, Member, IEEE Abstract— Extensive GaAs field-effect-transistor noise mea- In view of this situation, we compare the most-referenced surements are used to compare noise models with the aim of FET noise models in the frequency range of 0.05–26 GHz: recommending the most useful one for monolithic-microwave Pucel [1] with three coefficients (four in the case of a integrated-circuit design. The evaluation is based on noise and complex correlation coefficient), Pospieszalski [2], and -parameter measurements of metal–semiconductor field-effect transistors and high electron-mobility transistors with different Danneville/Cappy [3], [4] with two temperatures, and Gupta gatewidths in the frequency range of 0.05–26 GHz. The models [5], [6] with only one drain noise source. The problem can be under investigation differ in the number of independent coef- reduced to the question: How many parameters are necessary ficients necessary to calculate the four noise parameters of the for noise modeling? Therefore, we compare in detail the Pucel device. The broad frequency range including radio-frequency model with three parameters and the Pospieszalski model with frequencies down to 50 MHz requires two differen