Pure-shear mode BAW resonator consisting of 语言教学方法论.pdf

Digital Object Identifier: 10.1109/ULTSYM.2008.0022 Pure-shear mode BAW resonator consisting of (1120) textured AlN films Takahiko Yanagitani 1 and Masato Kiuch 2 1Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, 466-8555 Japan 2 National Institute of Advanced Industrial Science and Technology, Ikeda, 563-8577, Japan E-mail:yana@nitech.ac.jp Abstract—In-plane and out-of-plane oriented (11 2 0) textured losses. For thickness extensional mode, it is well-known that AlN thin films are attractive for shear mode piezoelectric devices AlN film has lower mechanical loss than ZnO film [10]. and sensors, such as FBAR and SH-SAW devices. It is proposed Likewise, in the case of thickness shear mode, AlN resonators here that highly oriented (11 20) AlN thin films can be fabricated may have higher Q factor than the ZnO resonators. using ion beam sputter-deposition system with grazing incidence to the substrate surface. Full-width-at-half-maximum (FWHM) 3). Temperature coefficient of elastic constant values of the ω-scan rocking curve and φ -scan profile curves of The resonant frequencies of piezoelectric resonators change the (11 22) X-ray diffraction poles were measured to be 4.6º and with temperature mainly due to changes in elasticity of the 23º, respectively. Shear-mode high-overtone acoustic resonator pi