Plasma-技术讲座1.pptVIP

什么是等离子体What is a Plasma? Fourth State of Matter 表面反应机理: 物理反应Surface Reaction Mechanisms: Physical Physical Sputtering - Argon Plasma Substrate Placed on (-) Electrode Ar+ Ion Attracted to (-) Electrode Impact Force Removes Contamination Advantages Non-Chemical Reaction: No Oxidation Pure Substrate Remaining Disadvantages - Easy to Minimize Substrate Damage: Impact, and Overheating Poor Selectivity Low Etch Rate Contaminant Redeposition 表面反应机理: 化学反应Surface Reaction Mechanisms: Chemical Plasma Generated Reactive Chemical Species Source Chemicals Include: H2, O2 and CF4 Ionized Source Chemical Produces Reactive Species Gas Phase Products Produced From Reactions with Substrate Surface Advantages High Cleaning Speed High Selectivity Effective for Organic Contaminants Disadvantages - Oxides Can Be Produced AP-1000 AP 1000 Vertical Door AP-1000e8 XTRAK System XTRAK-IFP System Field Configurable Number of Tracks Width of Tracks Part Dimensions: Width 16mm - 154mm 0.62” - 6” Length 76mm -305mm 2” - 12” Handling System: Conveyor Belt w/ Pinch Wheels Bridges Servo Driven Pusher Fiber-optic Sensor Multiple Strip Processing Capability Pressure – result of the gas molecules hitting the sides of the container yielding an average force being imparted uniformly across the chamber. Chamber pressure is determined by gas flow, outgassing rate and pumping speed. Pressure is a critical parameter for both physical and chemical processes. In general, higher pressures are desired for chemical cleaning, because the higher the pressure the higher the concentration of reactive species which results in higher cleaning rates – typical pressures are 200 – 800 mTorr. For physical processes – lower pressure is required because of the need for a long mean free path which in turn means that there must be fewer species in the process chamber. The greater the number of species available for bombardment, the better the cleaning rate. Note that when