矽基与太阳能半导体技术.doc

矽基與太陽能半導體技術 編號 專利名稱 發明人 可讓與 可專屬授權 可非專屬授權 專利摘要 C1 METHOD FOR UTILIZING ROUGH INSULATOR TO ENHANCE METAL-INSULATOR-SEMICONDUCTOR RELIABILITY 劉致為 　 ◎ ◎ A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied. C2 利用粗糙絕緣層增強金絕半元件穩定度之方法 劉致為 　 ◎ ◎ 本案為一種利用粗糙絕緣層以增強金絕半元件(metal-insulator-semiconductor)穩定度的方法，該方法包括下列步驟：提供一半導體基板；於高真空中預烤該半導體基板以形成粗糙表面；及於該半導體表面成長一絕緣層，形成表面及介面之粗糙度；進而增強該絕緣層應用於金絕半元件之穩定度。 C3 Method of fabricating polysilicon film by nickel/copper induced lateral crystallization 李嗣涔 　 ◎ ◎ The present invention relates to a method of fabricating polysilicon film by Nickel and Copper induced lateral crystallization for the TFT-LCD, comprising the step of: a) a thin (.about.4 nm) Copper and Nickel being evaporated onto the substrate; b) a amorphous-silicon film (.about.50 nm) being evaporated onto thereof obtained according to a); c) applying annealing at less than 600.degree. C. to thereof obtained according to b) for fast fabricating poly-silicon film. It is approximately 10 times faster than that of Ni induced polysilicon. The present invention is to provide a low-temperature ( C4 一種以鎳/銅金屬誘導橫向成長多晶矽薄膜的方法 李嗣涔 　 ◎ ◎ 本發明係一種以鎳／銅金屬誘導橫向成長多晶矽薄膜的方法，係用於TFT-LCD平面顯示器上，其主要係於基板上分別蒸鍍1至50nm厚度之銅金屬(Cu)及鎳金屬(Ni)；再於蒸鍍有銅(Cu)及鎳(Ni)多層金屬之樣品上成長1至200nm厚度之非晶矽薄膜；最後將蒸鍍有銅(Cu)、鎳(Ni)多層金屬及非晶矽薄膜之樣品以590℃以下的溫度退火快速形成一多晶矽薄膜，可以比傳統的鎳(Ni)單層金屬誘導橫向成長多晶矽薄膜快十倍以上；如是，可使本發明利用非晶矽氫薄膜於高溫爐退火時具有在低溫條件下快速成長出多晶矽薄膜的特點，藉以大幅減少製程的時間，而使得本技術能為工業界所採用。 C5 METHOD OF FABRICATING POLYSILICON FILM BY NICKLE/COPPER NDUCED LATERAL CRYSTALIZATION 李嗣涔 ◎ ◎ ◎ 本發明係一種以鎳／銅金屬誘導橫向成長多晶矽薄膜的方法，係用於TFT-LCD平面顯示器上，其主要係於基板上分別蒸鍍1至50nm厚