CuInSe2(CIS)和Cu( In, Ga) Se2 (CIGS)薄膜的制备进展.pdfVIP

# 122 # 材料导报:综述篇 2010 年8 月( 上) 第24 卷第8 期 CuInSe2 Cu(In, Ga) Se2 * 陈志钢, 马冠香, 唐明华,胡俊青 (, 201620) 综述了CuInSe (CIS) 和Cu( In, Ga) Se ( CIGS) 薄膜的必威体育精装版制备和研究进展,重点论述了几 制备方法 2 2 如热蒸发喷涂热解电化学沉积溶解旋涂高温液相合成等对相应薄膜的形貌结构成分以及所组成太阳能电池 光电性能的影响,探讨了这类薄膜太阳能电池存在的问题,展望了今后的研究方向 :TN304. 2;O611. 4 Advance in Preparation of CuInSe2 and Cu(In, Ga) Se2 Thin Films CHEN Zhigang, M Guanxiang, T NG Minghua, HU Junqing (State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of M aterials Science and Engineering, Donghua U niversity, Shanghai 201620) Abstract dvances in the preparation and research of CuInSe ( CIS) and Cu( In,Ga)Se ( CIGS) thin films are 2 2 reviewed. T he main attention is given to the effects of synthesis methods, including thermal evaporation, spray pyro lysis, electrochemical deposition, dissolutionspin coating and high temperature solutionbased synthesis, on the mor phologies, structures and compositions of thefilms and photoelectrical performances of the resulting CIS and CIGS so lar cells. The present problems and research direction in the future are also discussed. Ke words CuInSe2 , Cu(In, Ga)Se2 , thin film, preparation methods Ni l , p CIS CIGS n , CdS pn , , / , CIS CIGS 24 3. 2 10 J, 10000 , 10%0. 1% 20% , CIS [ 1] , CIGS 1. 13eV, Henri Becquerel 1839 CuO 1.4 eV , gX ,1954 ,