[材料科学]Zhao ShuiLin-FAB3 Wet Process Review.ppt

doritos\GS Technology Symposium\Presentation for GS Symposium_v3.ppt doritos\GS Technology Symposium\Presentation for GS Symposium_v3.ppt Wet Clean Process OverviewPrepared by: Jerry ZhaoApr 15, 2005 Introduction to Wet Cleaning Typical Process Flow Introduction to Wet Cleaning Wet Cleaning are a series of processes to make the wafer surface free from particles organic contamination inorganic contamination surface micro-roughness native oxide Introduction to Wet Cleaning Organic Contamination lubricants grease coolants detergents photoresist solvent residues fatty material from human handling airborne particle Introduction to Wet Cleaning Inorganic Contamination cations, anions, mostly from inorganic compounds that can be physically adsorbed or chemically bonded Contamination sources: chemical, wafer, metal debris from equipment, human Types of inorganic contamination Heavy metals: Fe, Cu, Ni, Zn, Au, Hg, Ag Alkali metals: Na, K, Li Light elements: Al, Mg, Ca, C, S, Cl, F Requirements of wet cleaning process Effective removal of all types of surface contaminants Not etching of damaging Si and SiO2 surface Contamination-free chemicals Safe, simple and economical for production application Ecologically acceptable, free of toxic waste products Implementable by a variety of techniques Achievements of wet cleaning process High purity of materials (UPC, UPW, UPG) Well-understanding of wet chemistry Software modification of recipe (Modified RCA Clean recipe, development of new recipes, and B Clean is the most popular clean recipe in ULSI application). Hardware improvement of tool configuration Well-characterization of process (Stability of chemical tank, optimization of cleaning parameters and well monitor of bath life and batch counts) Wet Equipments Immersion tool (SES, Kaijo, DNS, Akrion, SCP, etc.) Spray tool (Semitool, SEZ, FSI) Single wafer processing (SEZ, DNS) Wet Process Parameters Particle Etch Rate Uniformity Inline Defectivity Metallic Co