Atomic layer deposition process optimization by computational fluid dynamics文档.pdf

Vacuum 123 (2016) 103e110 Contents lists available at ScienceDirect Vacuum journal homepage: /locate/vacuum Atomic layer deposition process optimization by computational fluid dynamics Zhang Deng a, Wenjie He a, Chenlong Duan a, Bin Shan b, Rong Chen c, * a State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, PR China b State Key Laboratory of Material Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, PR China c State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, PR China a r t i c l e i n f o a b s t r a c t Article history: This paper presents a computational fluid dynamics model to optimize atomic layer deposition (ALD) Received 14 July 2015 process, in which the temperature, precursor mass fraction, mass flow and pressure have been quanti- Received in revised form tatively analyzed by combining surface chemical reactions with species transport. Simulation results 9 October 2015 show that the higher temperature increases the growth rate and accelerates the surface deposition Accepted 20 October 2015 Available online 23 October 2015 process, yet has little impact o