BSIM4 MOSFET Model for ckt simulation_2推荐.pdf

BSIM4 MOSFET Model for Circuit Simulation Chenming Hu Department of EECS University of California, Berkeley Chenming Hu University Of California Berkeley Acknowledgement p The BSIM project is partially supported by SRC, CMC, Conexant, TI, Mentor Graphics, and Xilinx. p CMC and member companies: Britt Brooks (CMC), Keith Green (TI), Josef Watts (IBM), Peter Lee (Hitachi), Bernd Lemaitre (Infineon), Judy An (AMD), and Kiran Gullap (Motorola). p BSIM team: Dr. Weidong Liu, Xiaodong Jin, Mark Cao, Jeff Ou Chenming Hu University Of California Berkeley Berkeley Short-channel IGFET Model (BSIM) - Industry Standard Model r BSIM3v3 has been chosen as the first industry standard model for circuit simulation and is supported by EIA Compact Model Council (CMC), a consortium of 20 companies including IBM, Intel, TI, Motorola, Lucent, AMD, Hitachi, Philips, Infineon, TSMC, Cadence, Avanti, etc. r As a standard model, BSIM simplifies technology sharing, foundry and other partnerships, and improves productivity. Chenming Hu University Of California Berkeley Review of BSIM3 BSIM3 Accounts for Major Physical Mechanisms • Short/Narrow Channel Effects on Threshold Voltage • Non-Uniform Doping Effects • Mobility Reduction Due to Vertical Field • Bulk Charge Effect • Carrier Velocity Saturation • Drain Induced Barrier Lowering (DIBL) • Channel Length Modulation (CLM) • Substrate Current Induced Body Effect (SCBE) • Parasitic Resistance Effects • Quantum Mechanic Charge Thickness Model • Unified Flicker Noise Model Chenming Hu University Of California Berkeley BSIM4 Overview Basic IV model Vth model for pocket/retrograde technologie