flexible nonvolatile polymer memory array on plastic substrate via initiated chemical vapor deposition.灵活的非易失性内存数组塑料聚合物衬底通过发起化学汽相淀积.pdf

Research Article Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition Byung Chul Jang, ∥,† Hyejeong Seong,∥,‡ Sung Kyu Kim,§ Jong Yun Kim, † Beom Jun Koo,† Junhwan Choi, ‡ Sang Yoon Yang,† Sung Gap Im,*,‡ and Sung-Yool Choi*,† †School of Electrical Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea ‡Department of Chemical and Biomolecular Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea S *Supporting Information ABSTRACT: Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5- trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays